Homogeneous and heterogeneous reactions in the decomposition of precursors for the MOCVD of high-k and ferroelectric films

By Condorelli G.G.   Baeri A.   Fragala I.L.   Lauretta V.   Smerlo G.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 135-139

Elsevier

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Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor

By Hellara J.   Hassen F.   Maaref H.   Dumont H.   Souliere V.   Monteil Y.  

Microelectronics, Vol. 35, Iss. 2, 2004-02 ,pp. : 207-212

Elsevier

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Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD

By Padeletti G.   Viticoli M.   Cusma A.   Ingo G.M.   Santoni A.   Loreti S.   Minarini C.   Viticoli S.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 105-114

Elsevier

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Effect of substitution of Ti by Zr in BaTiO 3 thin films grown by MOCVD

By Pantou R.   Dubourdieu C.   Weiss F.   Kreisel J.   Kobernik G.   Haessler W.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 237-241

Elsevier

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MOCVD for complex multicomponent thin films-a leading edge technology for next generation devices

By Schumacher M.   Lindner J.   Baumann P.K.   Schienle F.   Solayappan N.   Joshi V.   Araujo C.A.   McMillan L.D.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 85-91

Elsevier

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