Integration of high dielectric Ba 0.5 Sr 0.5 TiO 3 films into amorphous TaSiN barrier layer structures

Author: Wenger C.   Albert M.   Adolphi B.   Heuer H.   Bartha J.W.   Schlenkrich F.  

Publisher: Elsevier

ISSN: 1369-8001

Source: Materials Science in Semiconductor Processing, Vol.5, Iss.2, 2002-04, pp. : 233-236

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Abstract