Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

Author： Tomzig E. Virbulis J. von Ammon W. Gelfgat Y. Gorbunov L.

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.4, 2002-08, pp. : 347-351

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates

By Skupov V. D. Smolin V. K.

Russian Microelectronics, Vol. 32, Iss. 6, 2003-11 ,pp. : 382-384

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Impact of filtering on nanotopography measurement of 300mm silicon wafers

By Riedel F. Gerber H.-A. Wagner P.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 465-472

Elsevier

Access to resources Recommend Favorite

Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation

By Huang Hu Yan Jiwang

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115001-115007

IOP Publishing

Access to resources Recommend Favorite

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

By Zhicheng Z. Bingyan R. Yonghai C. Shaoyan Y. Zhanguo W.

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 504-509

Elsevier

Access to resources Recommend Favorite

E-MRS Spring Meeting 2002. The 300mm Silicon Era: Material, Equipment, Technology

By Richter H. Umeno M. Wagner P.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 311-311

Elsevier

Access to resources Recommend Favorite