Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Author： Kalaev V.V.   Lukanin D.P.   Zabelin V.A.   Makarov Y.N.   Virbulis J.   Dornberger E.   von Ammon W.  

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.4, 2002-08, pp. : 369-373

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Light Emission from Interface Traps and Bulk Defects in SiC MOSFETs

By Stahlbush R.E.   MacFarlane P.J.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 188-195

Springer Publishing Company

Access to resources Recommend Favorite

Mechanical properties of nitrogen-doped CZ silicon crystals

By Orlov V.   Richter H.   Fischer A.   Reif J.   Muller T.   Wahlich R.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 403-407

Elsevier

Access to resources Recommend Favorite

Electrical and Optical Characterization of Melt-Grown Bulk InAs 1−y P y Crystals

By Wei J.  

Journal of Electronic Materials, Vol. 40, Iss. 2, 2011-02 ,pp. : 103-108

Springer Publishing Company

Access to resources Recommend Favorite

Oxide precipitates in annealed nitrogen-doped 300mm CZ-SI

By Akhmetov V.D.   Richter H.   Lysytskiy O.   Wahlich R.   Muller T.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 391-396

Elsevier

Access to resources Recommend Favorite

Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals

By  

Semiconductor Science and Technology, Vol. 30, Iss. 2, 2015-02 ,pp. : 24006-24010

IOP Publishing

Access to resources Recommend Favorite