Studies on the effect of channel implantation on the drain current of a grooved-gate MOSFET

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.81, Iss.2, 1996-08, pp. : 137-148

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Reply to ‘Comment on “A compact drain current model of short-channel cylindrical gate-all-around MOSFETs”’

By Tsormpatzoglou A Tassis D H Dimitriadis C A

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38002-38002

IOP Publishing

Access to resources Recommend Favorite

Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

By Xiaoyu Ma Wanling Deng Junkai Huang

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 32002-32007

IOP Publishing

Access to resources Recommend Favorite

Comment on ‘A compact drain current model of short-channel cylindrical gate-all-around MOSFETs’

By Jha Shankaranand Kumar Subindu

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38001-38002

IOP Publishing

Access to resources Recommend Favorite

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

By Ho C. S.

International Journal of Electronics, Vol. 93, Iss. 3, 2006-03 ,pp. : 137-148

Taylor & Francis Ltd

Access to resources Recommend Favorite

Explicit current model for dual-gate MOSFET

By Karahaliloglu K. Dundar G.

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 2117-2125

Elsevier

Access to resources Recommend Favorite