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Chinese Physics B, Vol. 24, Iss. 3, 2015-03 ,pp. : 37304-37307

IOP Publishing

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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

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Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 87305-87312

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Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

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MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

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