Author： Beydoun B Zoaeter M Alaeddine A Rachidi I Bahsoun F Charlot J-J. Charles J-P.
Publisher： Emerald Group Publishing Ltd
ISSN： 1356-5362
Source： Microelectronics International, Vol.21, Iss.2, 2004-02, pp. : 16-22
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Abstract
Modifications of physical and electrical properties of the vertical double-diffused metal oxide semiconductor (VDMOS) transistor are observed on using the device under some conditions of "functional" stress. This paper presents the characterization and the 2D simulation for the pre- and post-stressed device, to point out the degraded parameters due to the functional stress, and to analyze their effects on the degradation of the VDMOS static and dynamic characteristics.
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