Measurement of mean free paths for inelastic electron scattering of Si and SiO 2

ISSN： 0022-0744

Source： Journal of Electron Microscopy, Vol.51, Iss.3, 2002-05, pp. : 143-148

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

First observation of SiO 2 /Si(100) interfaces by spherical aberration‐corrected high‐resolution transmission electron microscopy

By Tanaka* Nobuo

Journal of Electron Microscopy, Vol. 52, Iss. 1, 2003-03 ,pp. : 69-73

Oxford University Press

Access to resources Recommend Favorite

High-resolution transmission electron microscopy and electron energy-loss spectroscopy study of polycrystalline-Si/ZrO 2 /SiO 2 /Si metal-oxide-semiconductor structures

By Yang Jun-Mo Kim Joong Jung Kim Kyung-Seob Lee Wan-Gyu Kawasaki Masahiro

Journal of Electron Microscopy, Vol. 55, Iss. 1, 2006-01 ,pp. : 1-5

Oxford University Press

Access to resources Recommend Favorite

Contrast mechanism due to interface trapped charges for a buried SiO 2 microstructure in scanning electron microscopy

By Zhang Hai-Bo Li Wei-Qin Wu Dan-Wei

Journal of Electron Microscopy, Vol. 58, Iss. 1, 2009-01 ,pp. : 15-19

Oxford University Press

Access to resources Recommend Favorite

Visibility of Si nanoparticles embedded in an amorphous SiO 2 matrix

By Mitome Masanori

Journal of Electron Microscopy, Vol. 55, Iss. 4, 2006-08 ,pp. : 201-207

Oxford University Press

Access to resources Recommend Favorite

Grain boundary structure and chemical bonding state of superplastic SiO 2 -doped TZP

By Tanaka I.

Journal of Electron Microscopy, Vol. 46, Iss. 6, 1998-01 ,pp. : 467-472

Oxford University Press

Access to resources Recommend Favorite