Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure

By Tanaka Shigeyasu   Naito Akiyuki   Honda Yoshio   Sawaki Nobuhiko   Ichihashi Mikio  

Journal of Electron Microscopy, Vol. 56, Iss. 2, 2007-04 ,pp. : 37-42

Oxford University Press

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Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy

By Bright A.N.   Sharma N.   Humphreys C.J.  

Journal of Electron Microscopy, Vol. 50, Iss. 6, 2002-02 ,pp. : 489-495

Oxford University Press

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Investigation of the charge on threading edge dislocations in GaN by electron holography

By Jiao C.   Cherns D.  

Journal of Electron Microscopy, Vol. 51, Iss. 2, 2002-04 ,pp. : 105-112

Oxford University Press

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High-resolution three-dimensional scanning transmission electron microscopy characterization of oxidenitrideoxide layer interfaces in Si-based semiconductors using computed tomography

By Sadayama Shoji   Sekiguchi Hiromi   Bright Alexander   Suzuki Naohisa   Yamada Kazuhiro   Kaneko Kenji  

Journal of Electron Microscopy, Vol. 60, Iss. 3, 2011-06 ,pp. : 243-251

Oxford University Press

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Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope

By Ohno Yutaka   Takeda Seiji  

Journal of Electron Microscopy, Vol. 45, Iss. 1, 1996-02 ,pp. : 73-78

Oxford University Press

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