Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

Author: Grafutin V.   Ilyukhina O.   Myasishcheva G.   Kalugin V.   Prokopiev E.   Timoshenkov S.   Khmelevskii N.   Funtikov Yu.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7397

Source: Russian Microelectronics, Vol.34, Iss.3, 2005-05, pp. : 181-186

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract