Influence of implantation of silicon and oxygen ions into a heteroepitaxial silicon layer on a sapphire substrate on the leakage currents of n-channel transistors of CMOS IC SOS technology

Author： Chistilin A.   Romanov A.   Moskovskaya Yu.   Ulanova A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.40, Iss.3, 2011-05, pp. : 209-214

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