Nonpolar AlGaN/GaN HFETs with a normally off operation

Author： Ishida M   Kuroda M   Ueda T   Tanaka T  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.2, 2012-02, pp. : 24019-24024

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125017-125023

IOP Publishing

Access to resources Recommend Favorite

Effects of passivation on breakdown voltage and leakage current of normally-off InAlN/GaN MISHFETs—a simulation study

By Tang Chenjie   Shi Junxia  

Semiconductor Science and Technology, Vol. 29, Iss. 12, 2014-12 ,pp. : 125004-125010

IOP Publishing

Access to resources Recommend Favorite

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

By Baeumler Martina  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 756-760

Springer Publishing Company

Access to resources Recommend Favorite

AlGaN/GaN FETs looms over GaAs technology

By  

III-Vs Review, Vol. 16, Iss. 6, 2003-08 ,pp. : 40-42

Elsevier

Access to resources Recommend Favorite

Impact of charged basal stacking faults on the mobility of two-dimensional electron gas in nonpolar a-plane AlGaN/GaN heterostructures

By ZhangJinfeng   YanRan   LiuGuipeng   LiuHaonan   AnBei   NieYuhu   HaoYue  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85007-85013

IOP Publishing

Access to resources Recommend Favorite