Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF 4 plasma

By Zhao Shu-Xia   Gao Fei   Wang You-Nian   Bogaerts Annemie  

Plasma Sources Science and Technology, Vol. 22, Iss. 1, 2013-02 ,pp. : 15017-15034

IOP Publishing

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Actions of low- and high-energy electrons on the phase transition between E- and H-modes in an inductively coupled plasma in Ar

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New Journal of Physics, Vol. 13, Iss. 7, 2011-07 ,pp. : 443-453

IOP Publishing

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Effect of light irradiation from inductively coupled Ar plasma on etching yields of SiO2 film by CF3 ion beam injections

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Journal of Physics: Conference Series , Vol. 232, Iss. 1, 2010-06 ,pp. : 106-109

IOP Publishing

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Study of spatial distributions of F, H and CF2 radicals in DF CCP discharge in Ar/CF4 and Ar/CHF3 mixtures

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Journal of Physics: Conference Series , Vol. 207, Iss. 1, 2010-01 ,pp. : 106-111

IOP Publishing

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Effect of non-Maxwellian electron energy distribution functions on the simulation of an inductively coupled Ar-Hg discharge

By Liu Yang   Zissis Georges   Chen Yuming  

Plasma Sources Science and Technology, Vol. 22, Iss. 3, 2013-06 ,pp. : 35002-35012

IOP Publishing

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