Improved reconfigurability and noise margins in threshold logic gates via back-gate biasing in DG-MOSFETs

Author: Kaya Savas   Ting Darwin   Hamed Hesham  

Publisher: Springer Publishing Company

ISSN: 0925-1030

Source: Analog Integrated Circuits and Signal Processing, Vol.68, Iss.1, 2011-07, pp. : 101-109

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Abstract