Author： Sharkeev Yu. Ryabchikov A. Kozlov E. Kurzina I. Stepanov I. Bozhko I. Kalashnikov M. Fortuna S. Sivin D.
Publisher： Springer Publishing Company
ISSN： 1064-8887
Source： Russian Physics Journal, Vol.47, Iss.9, 2004-01, pp. : 936-945
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High-fluence ion implantation of In into Al crystals: formation and evolution of buried layers
By Touboltsev V. S. Dybkjaer G. Johansen A. Johnson E. Sarholt L. Andersen H. H. Olsen M.
Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 77, Iss. 2, 1998-02 ,pp. :
Access to resources
Recommend
Generation of high-intensity pulsed ion and plasma beams for material processing
By Werner Z. Piekoszewski J. Szymczyk W.
Vacuum, Vol. 63, Iss. 4, 2001-08 ,pp. :
Synthesis of SiGeC layers by ion implantation of Ge and C
By Kurata H. Ohfuti M. Futatsugi T.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :