A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Boriçi M.   Watling J.R.   Wilkins R.   Yang L.   Barker J.R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 163-167

Springer Publishing Company

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Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Watling J.R.   Yang L.   Boriçi M.   Barker J.R.   Asenov A.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 475-479

Springer Publishing Company

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Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Ikonić Z.   Harrison P.   Kelsall R.W.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 353-356

Springer Publishing Company

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Microscopic Description of Nanostructures Grown on (N11) Surfaces: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Povolotskyi Michael   Gleize Jérôme   Di Carlo Aldo   Lugli Paolo   Birner Stefan   Vogl Peter  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 275-279

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yang L.   Watling J.R.   Boriçi M.   Wilkins R.C.W.   Asenov A.   Barker J.R.   Roy S.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 363-368

Springer Publishing Company

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