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Springer Publishing Company

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Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

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Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 475-479

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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