ANNEALING INDUCED DEGRADATION OF THERMAL SiO₂ ON (1 0 0)Si: POINT DEFECT GENERATION

Author： STESMANS A. PIERREUX D. AFANAS'EV V. V.

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.158, Iss.1-6, 2003-01, pp. : 419-425

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