Accurate Modeling of Minimum Noise Figure in Algan/Gan High Electron Mobility Transistors

Author: Xu Y.   Guo Y.   Wu Y.   Xu R.   Yan B.   Lin W.  

Publisher: Taylor & Francis Ltd

ISSN: 1569-3937

Source: Journal of Electromagnetic Waves and Applications, Vol.25, Iss.5-6, 2011-02, pp. : 819-832

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Abstract