Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

By Hai-Feng Chen   Li-Xin Guo   Pu-Yang Zheng   Zhao Dong   Qian Zhang  

Chinese Physics B, Vol. 24, Iss. 7, 2015-07 ,pp. : 78502-78507

IOP Publishing

Access to resources Recommend Favorite

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

By Jie-Yu Qin   Gang Du   Xiao-Yan Liu  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 107104-107108

IOP Publishing

Access to resources Recommend Favorite

Gate-modulated generation—recombination current in n-type metal—oxide—semiconductor field-effect transistor

By  

Chinese Physics B, Vol. 23, Iss. 12, 2014-12 ,pp. : 128502-128506

IOP Publishing

Access to resources Recommend Favorite

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

By Fan Min-Min   Xu Jing-Ping   Liu Lu   Bai Yu-Rong   Huang Yong  

Chinese Physics B, Vol. 24, Iss. 3, 2015-03 ,pp. : 37303-37307

IOP Publishing

Access to resources Recommend Favorite

Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

By Li-Juan Ma   Xiao-Li Ji   Yuan-Cong Chen   Hao-Guang Xia   Chen-Xin Zhu   Qiang Guo   Feng Yan  

Chinese Physics Letters, Vol. 31, Iss. 9, 2014-09 ,pp. : 97302-97304

IOP Publishing

Access to resources Recommend Favorite