Application of atomic layer deposited Al2O3 as charge injection layer for high-permittivity dielectrics

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|2|24012-24018

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.2, 2015-02, pp. : 24012-24018

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