Dynamic moderation of an electric field using a SiO2 switching layer in TaOx ‐based ReRAM

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6270|9|3|166-170

ISSN： 1862-6254

Source： PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol.9, Iss.3, 2015-03, pp. : 166-170

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