Comparative study of defect evolution in carbon implanted strained SiGe and SiSn layers

E-ISSN： 1610-1642|12|1‐2|120-125

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.1‐2, 2015-01, pp. : 120-125

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

HRTEM study of strained Si/Ge multilayers

By Romeo M. Uhlaq-Bouillet C. Deville J.P. Werckmann J. Ehret G. Chelly R. Dentel D. Angot T. Bischoff J.L.

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 168-171

Elsevier

Access to resources Recommend Favorite

Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

By Liu J.L. Wang K.L. Moore C.D. Goorsky M.S. Borca-Tasciuc T. Chen G.

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 121-125

Elsevier

Access to resources Recommend Favorite

Electrical properties of stacked gate dielectric (SiO 2 /ZrO 2 ) deposited on strained SiGe layers

By Chatterjee S. Samanta S.K. Banerjee H.D. Maiti C.K.

Thin Solid Films, Vol. 422, Iss. 1, 2002-12 ,pp. : 33-38

Elsevier

Access to resources Recommend Favorite

Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

By Sembian A.M. Konuma M. Silier I. Gutjahr A. Rollbuhler N. Banhart F. Moorthy Babu S. Ramasamy P.

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 116-119

Elsevier

Access to resources Recommend Favorite

Novel strained Si/relaxed SiGe channel PMOSFETs

By Li C. Luo G. Liu Z. Chen P. Tsien P.-H.

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 112-115

Elsevier

Access to resources Recommend Favorite