The optical and electrical properties of AP-MOVPE GaSb grown using TEGa and TMSb

By Miya S.   Wagener V.   Botha J.  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 373-378

Springer Publishing Company

Access to resources Recommend Favorite

Deep levels, electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

By Chen J.   Chen N.   Liu H.  

Journal of Electronic Materials, Vol. 25, Iss. 11, 1996-11 ,pp. : 1790-1796

Springer Publishing Company

Access to resources Recommend Favorite

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

By Romero O.S.   Aragon A.A.   Rahimi N.   Shima D.   Addamane S.   Rotter T.J.   Mukherjee S.   Dawson L.R.   Lester L.F.   Balakrishnan G.  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 926-930

Springer Publishing Company

Access to resources Recommend Favorite

Formation of InSb quantum dots in a GaSb matrix

By Tsatsul’Nikov A.   Ivanov S.   Kop’Ev P.   Kryganovskii A.   Ledentsov N.   Maximov M.   Mel’Tser B.   Nekludov P.   Suvorova A.   Titkov A.   Volovik B.   Grundmann M.   Bimberg D.   Alferov Zh.  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 414-417

Springer Publishing Company

Access to resources Recommend Favorite

Effects of H 2 /NH 3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

By Yang Chien-Cheng   Koh Pao-Ling   Wu Meng-Chyi   Lee Chih-hao   Chi Gou-Chung  

Journal of Electronic Materials, Vol. 28, Iss. 10, 1999-10 ,pp. : 1096-1100

Springer Publishing Company

Access to resources Recommend Favorite