The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels

Author： Ghupur Yasenjan Geni Mamtimin Mamat Mamatrishat Abudureheman Abudukelimu

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.4, 2015-04, pp. : 44004-44009

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