Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

By Yanyue Li   Xiaochuan Deng   Yunfeng Liu   Yanli Zhao   Chengzhan Li   Xixi Chen   Bo Zhang  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94003-94006

IOP Publishing

Access to resources Recommend Favorite

Control of Interface Traps in HfO 2 Gate Dielectric on Silicon

By Tan S.  

Journal of Electronic Materials, Vol. 39, Iss. 11, 2010-11 ,pp. : 2435-2440

Springer Publishing Company

Access to resources Recommend Favorite

Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO 2 /SiC interface

By Das M.   Cooper J.   Melloch M.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 353-357

Springer Publishing Company

Access to resources Recommend Favorite

Density of states at a gamma-irradiated Si/SiO₂ interface: The effect of ultrasonic treatment

By Parchinskii P.  

Russian Microelectronics, Vol. 34, Iss. 6, 2005-11 ,pp. : 356-358

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Improvements in the Quasi-static Capacitance–Voltage Characterization of Semiconductor–Insulator Interface States (Si/SiO₂)

By Gulyaev I. B.   Zhdan A. G.   Kukharskaya N. F.   Tikhonov R. D.   Chucheva G. V.  

Russian Microelectronics, Vol. 33, Iss. 4, 2004-07 ,pp. : 224-235

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite