InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

Author： ZhaoYi   Jun Shuai Xue   Jin Cheng Zhang   Xiao Wei Zhou   Ya Chao Zhang   HaoYue  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|7|75005-75009

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.7, 2015-07, pp. : 75005-75009

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