Effect of sputtering power on surface characteristics and crystal quality of AlN films deposited by pulsed DC reactive sputtering

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3951|252|5|1163-1171

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 1163-1171

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering

By Kusaka K. Taniguchi D. Hanabusa T. Tominaga K.

Vacuum, Vol. 59, Iss. 2, 2000-11 ,pp. : 806-813

Elsevier

Access to resources Recommend Favorite

Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering

By Xu X.-H. Wu H.-S. Zhang C.-J. Jin Z.-H.

Thin Solid Films, Vol. 388, Iss. 1, 2001-06 ,pp. : 62-67

Elsevier

Access to resources Recommend Favorite

Study of reactive DC magnetron sputtering deposition of AlN thin films

By Dechev D.A. Dimitrova V.I. Manova D.I.

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 193-197

Elsevier

Access to resources Recommend Favorite

Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering

By Lee S.-H. Hyun Yoon K. Cheong D.-S. Lee J.-K.

Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 193-198

Elsevier

Access to resources Recommend Favorite

Control of preferential orientation of AlN films prepared by the reactive sputtering method

By Ishihara M. Li S.J. Yumoto H. Akashi K. Ide Y.

Thin Solid Films, Vol. 316, Iss. 1, 1998-03 ,pp. : 152-157

Elsevier

Access to resources Recommend Favorite