Characterization of Si and SiOx films deposited in very high‐frequency excited atmospheric‐pressure plasma and their application to bottom‐gate thin film transistors

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|7|1571-1577

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.7, 2015-07, pp. : 1571-1577

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