Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Author： Reuters B   Hahn H   Pooth A   Holländer B   Breuer U   Heuken M   Kalisch H   Vescan A  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.47, Iss.17, 2014-04, pp. : 175103-175112

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