Related content

C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis

By Zhdan A.   Chucheva G.   Naryshkina V.  

Russian Microelectronics, Vol. 36, Iss. 3, 2007-05 ,pp. : 139-147

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Temperature dependent I_DS–V_GS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

By Yan Liu   Jing Yan   Hongjuan Wang   Genquan Han  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24001-24004

IOP Publishing

Access to resources Recommend Favorite

Effects of oxygen plasma treatment on V _th uniformity of recessed-gate AlGaN/GaN HEMTs

By Hong Ki-Ha   Choi Hyuk   Hwang Injun   Kim Jongseob  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 363-367

Springer Publishing Company

Access to resources Recommend Favorite

New op-amp-RC to G _m -C transformation method

By Ahmed Rania   Awad Inas   Soliman Ahmed  

Analog Integrated Circuits and Signal Processing, Vol. 49, Iss. 1, 2006-10 ,pp. : 79-86

Springer Publishing Company

Access to resources Recommend Favorite

Galvanomagnetic properties and electronic structure of Pb_1−x−ySn_xV_yTe under pressure

By Skipetrov E P   Golovanov A N   Kovalev B B   Knotko A V   Slyn’ko E I   Slyn’ko V E  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15019-15027

IOP Publishing

Access to resources Recommend Favorite