Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

Author: Cho Kyungjune   Kim Tae-Young   Park Woanseo   Park Juhun   Kim Dongku   Jang Jingon   Jeong Hyunhak   Hong Seunghun   Lee Takhee  

Publisher: IOP Publishing

ISSN: 0957-4484

Source: Nanotechnology, Vol.25, Iss.15, 2014-04, pp. : 155201-155207

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next