V-pit to truncated pyramid transition in AlGaN-based heterostructures

Author： Mogilatenko A Enslin J Knauer A Mehnke F Bellmann K Wernicke T Weyers M Kneissl M

E-ISSN： 1361-6641|30|11|114010-114017

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.11, 2015-11, pp. : 114010-114017

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125012-125016

IOP Publishing

Access to resources Recommend Favorite

Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

By Sang Min Jung Chang Taek Lee Moo Whan Shin

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75012-75017

IOP Publishing

Access to resources Recommend Favorite

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

By Kaun Stephen W Mazumder Baishakhi Fireman Micha N Kyle Erin C H Mishra Umesh K Speck James S

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55010-55017

IOP Publishing

Access to resources Recommend Favorite

Transport coefficients of AlGaN/GaN heterostructures

By Ahoujja M. Mitchel W. Elhamri S. Newrock R. Mast D. Redwing J. Tischler M. Flynn J.

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 210-214

Springer Publishing Company

Access to resources Recommend Favorite

Moving photoluminescence band in AlGaN/GaN heterostructures

By OsinnykhI V MalinT V ZhuravlevK S

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85010-85015

IOP Publishing

Access to resources Recommend Favorite