Very low temperature (450 °C) selective epitaxial growth of heavily

By Aubin J   Hartmann J M   Veillerot M   Essa Z   Sermage B  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115006-115015

IOP Publishing

Access to resources Recommend Favorite

SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

By Mooney P.   Chu J.   Ott J.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 921-927

Springer Publishing Company

Access to resources Recommend Favorite

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypes

By Xu Chi   Gallagher J D   Wallace P M   Senaratne C L   Sims P   Menéndez J   Kouvetakis J  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105028-105036

IOP Publishing

Access to resources Recommend Favorite

Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

By Wu P.   Yang G.   You L.   Mathur D.   Cocoziello A.   Lang C.   Moore J.   Lu T.   Bakru H.  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 949-953

Springer Publishing Company

Access to resources Recommend Favorite

Strain relaxation mechanisms in Si 1−x Ge x layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

By Rodríguez A.   Rodríguez T.   Kling A.   Soares J.   Silva M.   Ballesteros C.  

Journal of Electronic Materials, Vol. 28, Iss. 2, 1999-02 ,pp. : 77-82

Springer Publishing Company

Access to resources Recommend Favorite