Author： Huanqin Dang Xiaoming Wu Xiaowei Sun Runqiu Zou Ruochuan Zhang Shougen Yin
Publisher： IOP Publishing
ISSN： 1674-4926
Source： Journal of Semiconductors, Vol.36, Iss.10, 2015-10, pp. : 104003-104007
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Abstract
We report an effective method to improve the performance of p-type copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) by employing a thin para-quaterphenyl (p-4p) film and simultaneously applying V2O5 to the source/drain regions. The p-4p layer was inserted between the insulating layer and the active layer, and V2O5 layer was added between CuPc and Al in the source–drain (S/D) area. As a result, the field-effect saturation mobility and on/off current ratio of the optimized device were improved to 5 × 10−2 cm2/(V·s) and 104, respectively. We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers. Moreover, by introducing the V2O5 electrode's modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced.
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