Related content

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

By Denisov S.   Chalkov V.   Shengurov V.   Svetlov S.   Pavlov D.   Pitirimova E.  

Inorganic Materials, Vol. 46, Iss. 7, 2010-07 ,pp. : 693-702

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

By Denisov S.   Svetlov S.   Chalkov V.   Shengurov V.   Pavlov D.   Korotkov E.   Pitirimova E.   Trushin V.  

Inorganic Materials, Vol. 43, Iss. 4, 2007-04 ,pp. : 331-337

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

By Shengurov V.   Svetlov S.   Chalkov V.   Gorshenin G.   Shengurov D.   Denisov S.  

Inorganic Materials, Vol. 41, Iss. 11, 2005-11 ,pp. : 1131-1134

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structurally perfect silicon layers produced on sapphire by oxygen ion implantation

By Vorotyntsev V.   Shobolov E.   Gerasimov V.  

Inorganic Materials, Vol. 47, Iss. 6, 2011-06 ,pp. : 571-574

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy

By Shengurov V.G.   Svetlov S.P.   Chalkov V.Y.   Maksimov G.A.   Krasil'nik Z.F.   Andreev B.A.   Stepikhova M.V.   Shengurov D.V.  

Inorganic Materials, Vol. 38, Iss. 5, 2002-05 ,pp. : 421-424

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite