Effect of point defects on lattice constant in MgO thin film deposited on silicon(0 0 1) substrate

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Post-annealed silicon nanocrystal formation on substoichiometric SiO_xN_y (x < 2, y < 1) layers deposited in SiH₄-N₂O radiofrequency discharges

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Characteristics of deposited Eu₂O₃ film as a thick gate dielectric for silicon

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EPJ Applied Physics (The), Vol. 28, Iss. 1, 2004-08 ,pp. : 59-64

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A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF₄-H₂-He PECVD

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Anomalous nucleation of gold nanoparticles on silicon substrate and monitoring the growth of ZnO nanowires on such structures

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