Cryogenic operation of heavy ion implanted N- and P-channel MOSFETs

Publisher: Edp Sciences

E-ISSN: 1764-7177|08|PR3|Pr3-37-Pr3-40

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-37-Pr3-40

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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