Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channel

E-ISSN： 1764-7177|08|PR3|Pr3-41-Pr3-44

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-41-Pr3-44

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