CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD

Publisher: Edp Sciences

E-ISSN: 1764-7177|02|C2|C2-803-C2-808

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-803-C2-808

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