Related content

Conduction and charge storage in Cr-thin SiO2-pSi structures

By  

Revue de Physique Appliquée (Paris), Vol. 19, Iss. 4, 1984-04 ,pp. : 343-347

Edp Sciences

Access to resources Recommend Favorite

Comparison of Fluorinated HfO₂ and Si₃N₄ Charge Trapping Layer for Nonvolatile Flash Memories

By Chen Yung-Yu   Lei Gen   Shen Yu-Jie   Lin Shin-Chieh   Chen Yih-Chien  

Ferroelectrics, Vol. 435, Iss. 1, 2012-01 ,pp. : 38-45

Taylor & Francis Ltd

Access to resources Recommend Favorite

Influence of SiO2 buffer layer on the crystalline quality and photoluminescence of ZnO thin films

By  

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 326-331

IOP Publishing

Access to resources Recommend Favorite

Influence of magnetic layer thickness on [Fe₈₀Ni₂₀—O/SiO₂]_n multilayer thin films

By Jian-Qing Wei   Hao Geng   Lei Xu   Lai-Sen Wang   Yuan-Zhi Chen   Guang-Hui Yue   Dong-Liang Peng  

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 87504-87507

IOP Publishing

Access to resources Recommend Favorite

Direct micro-imaging of point defects in bulk SiO₂, applied to vacancy diffusion and clustering

By Suhovoy E.   Mishra V.   Shklyar M.   Shtirberg L.   Blank A.  

EPL (EUROPHYSICS LETTERS), Vol. 90, Iss. 2, 2010-05 ,pp. : 26009-26009

Edp Sciences

Access to resources Recommend Favorite