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The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*

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Low temperature drive-in of surface-deposited copper in silicon wafers

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A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation

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EPJ Web of Conference, Vol. 170, Iss. issue, 2018-01 ,pp. : 01006-01006

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Influence of annealing temperature of ZnO layer on synthesizing low dimensional GaN nanostructured materials

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