Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

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Journal of Semiconductors, Vol. 34, Iss. 2, 2013-02 ,pp. : 24003-24006

IOP Publishing

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Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

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Journal of Semiconductors, Vol. 35, Iss. 1, 2014-01 ,pp. : 14008-14011

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Dual-gate AlGaN/GaN MIS-HEMTs using Si

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Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115010-115014

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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO₂ gate insulators

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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

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