Electron microscopy of gallium nitride growth on polycrystalline diamond

By Webster R F   Cherns D   Kuball M   Jiang Q   Allsopp D  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114007-114012

IOP Publishing

Access to resources Recommend Favorite

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

By Prakash Gokul   Gray Jennifer L   Kanicki J   Prakash Gokul  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55008-55015

IOP Publishing

Access to resources Recommend Favorite

Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

By Sudhir G.   Fujii H.   Wong W.   Kisielowski C.   Newman N.   Dieker C.   Liliental-Weber Z.   Rubin M.   Weber E.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 215-221

Springer Publishing Company

Access to resources Recommend Favorite

Transmission electron microscopy study on domain structures in Bi 3 TiNbO 9 ceramics

By Su D.   Zhu J.S.   Xu Q.Y.   Liu J.S.   Wang Y.N.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 825-829

Elsevier

Access to resources Recommend Favorite

A Transmission Electron Microscopy Study of Microstructure Evolution with Increasing Anneal Temperature in Ti/Al Ohmic Contacts to n-GaN

By Bright A.N.   Tricker D.M.   Humphreys C.J.   Davies R.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 283-286

Springer Publishing Company

Access to resources Recommend Favorite