Potential profile evaluation of a diamond lateral p–n junction diode using Kelvin probe force microscopy

E-ISSN： 1862-6319|212|11|2589-2594

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.11, 2015-11, pp. : 2589-2594

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Fabrication of diamond lateral p–n junction diodes on (111) substrates

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 11, 2015-11 ,pp. : 2548-2552

John Wiley & Sons Inc

Access to resources Recommend Favorite

Surface potential measurements using the Kelvin probe force microscope

By Yasutake M. Fujihira M. Aoki D.

Thin Solid Films, Vol. 273, Iss. 1, 1996-02 ,pp. : 279-283

Elsevier

Access to resources Recommend Favorite

Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy

By Tsurekawa S. Kido K. Watanabe T.

Philosophical Magazine Letters, Vol. 85, Iss. 1, 2005-01 ,pp. : 41-49

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation of Surface Sulfurization in CuIn_1−xGa_xS_2−ySe_y Thin Films by Using Kelvin Probe Force Microscopy

CHEMPHYSCHEM, Vol. 19, Iss. 3, 2018-02 ,pp. : 261-265

John Wiley & Sons Inc

Access to resources Recommend Favorite

Cover Feature: Investigation of Surface Sulfurization in CuIn_1−xGa_xS_2−ySe_y Thin Films by Using Kelvin Probe Force Microscopy (ChemPhysChem 3/2018)

CHEMPHYSCHEM, Vol. 19, Iss. 3, 2018-02 ,pp. : 249-249

John Wiley & Sons Inc

Access to resources Recommend Favorite