Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor

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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

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Stacking faults in intrinsic and N-doped 4H-SiC: true influence of the N-doping on their multiplicity

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Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping

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