Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

Publisher： Edp Sciences

E-ISSN： 1286-4897|7|7|1389-1398

ISSN： 1155-4320

Source： Journal de Physique III, Vol.7, Iss.7, 1997-07, pp. : 1389-1398

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS

By  

Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. : C6-335-C6-336

Edp Sciences

Access to resources Recommend Favorite

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors“

By Yarykin N.  

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 832-834

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Spectra of polycrystalline and single-crystal silicon for solar cells measured by deep-level transient spectroscopy

By Kikkarin S.   Mukashev B.   Tamendarov M.   Tokmoldin S.  

Technical Physics Letters, Vol. 23, Iss. 2, 1997-02 ,pp. : 147-148

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-443-C4-446

Edp Sciences

Access to resources Recommend Favorite

Deep-level optical spectroscopy of ZnTe

By Kvit A.   Medvedev S.   Klevkov Yu.   Zaitsev V.   Onishchenko E.   Klokov A.   Bagaev V.   Tsikunov A.   Perestoronin A.   Yakimov M.  

Physics of the Solid State, Vol. 40, Iss. 6, 1998-06 ,pp. : 924-929

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite