Reply to 'Comments on the article ''Transport properties of Sn-doped InSb thin films and application to Hall element [J. Crys Growth 251(2003)560]'' by M. Oszwaldowski [J. Crys Growth 260(2004)600]'

Author： Okamoto A.   Shibasaki I.  

Publisher： Elsevier

ISSN： 0022-0248

Source： Journal of Crystal Growth, Vol.260, Iss.3, 2004-01, pp. : 603-605

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Comments on the article ''Transport properties of Sn-doped InSb thin films and application to Hall element''[J. Crystal Growth 251 (2003) 560]

By Oszwaldowski M.  

Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 600-602

Elsevier

Access to resources Recommend Favorite

Low-temperature transport properties of InSb films on GaAs(100) substrates

By Ishida S.   Takeda K.   Okamoto A.   Shibasaki I.  

Physica E, Vol. 18, Iss. 1, 2003-05 ,pp. : 159-160

Elsevier

Access to resources Recommend Favorite

Effects of postannealing in ozone environment on opto-electrical properties of Sn-doped In 2 O 3 thin films

By Mori N.   Ooki S.   Masubuchi N.   Tanaka A.   Kogoma M.   Ito T.  

Thin Solid Films, Vol. 411, Iss. 1, 2002-05 ,pp. : 6-11

Elsevier

Access to resources Recommend Favorite

Epitaxial growth of InSb films by r.f. magnetron sputtering

By Miyazaki T.   Kunugi M.   Kitamura Y.   Adachi S.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 51-56

Elsevier

Access to resources Recommend Favorite

Growth of dielectric layers on the InSb surface

By Rastogi A.   Reddy K.V.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 616-620

Elsevier

Access to resources Recommend Favorite