Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy

Author： Xie S.Y.   Yoon S.F.   Wang S.Z.   Sun Z.Z.   Chen P.   Chua S.J.  

Publisher： Elsevier

ISSN： 0022-0248

Source： Journal of Crystal Growth, Vol.260, Iss.3, 2004-01, pp. : 366-371

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