Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

Author： Tanaka S.   Honda Y.   Kameshiro N.   Iwasaki R.   Sawaki N.   Tanji T.   Ichihashi M.  

Publisher： Elsevier

ISSN： 0022-0248

Source： Journal of Crystal Growth, Vol.260, Iss.3, 2004-01, pp. : 360-365

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